The NCE30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

NCE30H10G General Features
● VDS =30V,ID =100A
RDS(ON) <2.5 mΩ @ VGS=10V
RDS(ON) <3.5mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

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